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2N80-C - 800V NHANNEL POWER MOSFET

General Description

The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S0.
  • RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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UNISONIC TECHNOLOGIES CO., LTD 2N80-C 2.0A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.