Unisonic Technologies 2N80-C
The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 2N80-C |
|---|---|
| Datasheet | 2N80-C Download |
| Manufacturer |  Unisonic Technologies |
| Description | 800V NHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
● FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N80L-TA3-T 2N80G-TA3-T 2N80L-TF3-T 2N80G-TF3-T 2N80L-TF1-T 2N80G-TF1-T 2N80L-TM3-T 2N80G-TM3-T 2N80L-TN3-R 2N80G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-507.C 2N80-C
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-507.C 2N80-C Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 800 V VGSS ±30 V Drain Current Continuous ID 2 A Pulsed (Note 2) IDM 4 A Avalanche Energy Single Pulse...
