Unisonic Technologies 2N80
2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.DESCRIPTION
The UTC The UTC 2N80 is universally applied in high efficiency switch mode power supply.●
FEATURES
* RDS(on) ≤ 6.3 Ω @ VGS=10V, ID=1.2A * High switching speed● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N80L-TA3-T 2N80G-TA3-T 2N80L-TF1-T 2N80G-TF1-T 2N80L-TF2-T 2N80G-TF2-T 2N80L-TF3-T 2N80G-TF3-T 2N80L-TM3-T 2N80G-TM3-T 2N80L-TN3-R 2N80G-TN3-R 2N80L-TND-R 2N80G-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tape Reel Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-480.G 2N80
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R502-480.G 2N80 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) TO-220 VDSS VGSS IAR ID IDM EAS dv/dt 800 V ±30 V 2.