Unisonic Technologies 2NM120
2NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.| Part No. | 2NM120 |
|---|---|
| Datasheet | 2NM120 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * High Switching Speed● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2NM120L-TF1-T 2NM120G-TF1-T 2NM120L-TF2-T 2NM120G-TF2-T 2NM120L-TN3-R 2NM120G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-252 Pin Assignment 1 2 3 GDS GDS GDS Packing Tube Tube Tape Reel
● MARKING Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-D98.b 2NM120 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Pulsed Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 1200 V ±30 V 2 A 4 A 60 mJ 2.5 V/ns Power Dissipation TO-220F1 TO-220F2 PD TO-252 21 W 23 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
