Datasheet4U.com

2SB647 Datasheet PDF

Unisonic Technologies 2SB647

2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier.
Part No. 2SB647
Datasheet 2SB647 Download
Manufacturer
Unisonic Technologies
Description PNP Transistor
Buy Stock & Price
2SB647 datasheet page 1 preview

DESCRIPTION

The UTC
● APPLICATION * Low frequency power amplifier
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB647L-x-T9N-B 2SB647G-x-T9N-B 2SB647L-x-T9N-K 2SB647G-x-T9N-K Package TO-92NL TO-92NL Pin Assignment 123 ECB ECB Packing Tape Box Bulk
● MARKING INFORMATION PACKAGE TO-92NL MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R211-010.C 2SB647 PNP EPITAXIAL SILICON TRANSISTOR
●

ABSOLUTE MAXIMUM RATINGS

(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -120 -80 V V Emitter-Base Voltage Collector Current VEBO IC -6 -1 V A Collector Peak Current Collector Power Dissipation ICP -2 A PC 0.9 W Junction Temperature Storage Temperature TJ TSTG 150 -55 ~ +150 °C °C Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤10ms, Dut...
2SB647 page 2 preview 2SB647 page 3 preview