Unisonic Technologies 2SC2625
NPN EPITAXIAL SILICON TRANSISTOR
FEATURES
* High voltage, high speed switching * High reliability NPN EPITAXIAL SILICON TRANSISTOR 1 TO-3P *Pb-free plating product number: 2SC2625L PIN INFORMATION PIN NO. 1 2 3 PIN NAME Base Collector Emitter ORDERING INFORMATION Order Number Normal Lead free plating 2SC2625-T3P-T 2SC2625L-T3P-T Package TO-3P Packing Tube Copyright © 2005 Unisonic Technologies Co.,LTD 1 of 3 QW-R214-009,B 2SC2625 PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTORABSOLUTE MAXIMUM RATINGS
(TC=25 ) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB PD TJ TSTG RATINGS 450 400 400 7 10 3 80 +150 -40 ~ +150 UNIT V V V V A A WELECTRICAL SPECIFICATIONS
(TC =25 , Unless Otherwise Specified) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter C...