Unisonic Technologies 2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
| Part No. | 2SC3669 |
|---|---|
| Datasheet | 2SC3669 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
POWER SWITCHINGAPPLICATIONS
●FEATURES
* Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0μs (Typ.)● ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 2SC3669G-x-AA3-R - 2SC3669G-x-AB3-R 2SC3669L-x-TM3-T 2SC3669G-x-TM3-T 2SC3669L-x-TN3-R 2SC3669G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-223 SOT-89 TO-251 TO-252 Pin Assignment 123 BCE BCE BCE BCE Packing Tape Reel Tape Reel Tube Tape Reel
● MARKING SOT-223 SOT-89 TO-251 / TO-252 Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-015.D 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR
● PIN ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO 80 V VCEO 80 V Emitter-Base Voltage Collector Current VEBO 5 V IC 2 A Base Current Collector Power Dissipation SOT-223/SOT-89 TO-251/TO-252 IB PC 1A 0.5 W 1W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
