2SC3669 - NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies

Key Features

S.
Low saturation voltage VCE(SAT)=0.5V (Max. ).
High speed switching time: TSTG=1.0μs (Typ. ).

2SC3669 npn epitaxial silicon transistor by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	2SC3669
Manufacturer	Unisonic Technologies
File Size	296.48 KB
Description	NPN EPITAXIAL SILICON TRANSISTOR
Datasheet	2SC3669 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC3669	Silicon NPN Epitaxial Type TRANSISTOR	Toshiba Semiconductor
2SC3661	NPN Transistor	Sanyo Semicon Device
2SC3661	Transistor	Kexin
2SC3663	NPN EPITAXIAL SILICON TRANSISTOR	NEC
2SC3663	Transistor	Kexin

Other Datasheets by Unisonic Technologies

Part Number	Description
2SC3647	NPN EPITAXIAL SILICON TRANSISTOR
2SC3648	NPN EPITAXIAL SILICON TRANSISTOR
2SC3149	NPN TEANSISTOR
2SC3320	NPN EPITAXIAL SILICON TRANSISTOR
2SC3355	NPN SILICON EPITAXIAL TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0μs (Typ.)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 2SC3669G-x-AA3-R - 2SC3669G-x-AB3-R 2SC3669L-x-TM3-T 2SC3669G-x-TM3-T 2SC3669L-x-TN3-R 2SC3669G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-223 SOT-89 TO-251 TO-252 Pin Assignment 123 BCE BCE BCE BCE Packing Tape Reel Tape Reel Tube Tape Reel  MARKING SOT-223 SOT-89 TO-251 / TO-252 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-015.