Unisonic Technologies 2SC5569
NPN EPITAXIAL SILICON TRANSISTOR
| Part No. | 2SC5569 |
|---|---|
| Datasheet | 2SC5569 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
*High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to 2SA2016. 1APPLICATIONS
*Relay drivers, lamp drivers, motor drivers, strobes SOT-89 1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS
(Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Tc=25°C Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Icp IB Pc Tj Tstg 2 VALUE 80 50 6 7 10 1.2 1.3* 3.5 150 -55 ~ +150 UNIT V V V A A A W °C °C * Mounted on ceramic board (250mm ×0.8mm)ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation...
