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2SC5569 - NPN EPITAXIAL SILICON TRANSISTOR

Key Features

  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation.
  • Complementary to 2SA2016. 1.

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UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to 2SA2016. 1 APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Tc=25°C Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic www.DataSheet4U.com Icp IB Pc Tj Tstg 2 VALUE 80 50 6 7 10 1.2 1.3* 3.5 150 -55 ~ +150 UNIT V V V A A A W °C °C * Mounted on ceramic board (250mm ×0.