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2SC5765 - NPN EPITAXIAL SILICON TRANSISTOR

Datasheet Summary

Description

medium power amplifier applications strobo flash applications

Features

  • S.
  • Low Saturation Voltage: VCE(sat) = 0.27 V (max. ), (Ic = 3A / IB =60 mA).

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Datasheet Details

Part number 2SC5765
Manufacturer UTC
File Size 199.16 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet 2SC5765 Datasheet
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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH  DESCRIPTION medium power amplifier applications strobo flash applications  FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5765L-T9S-K 2SC5765G-T9S-K TO-92SP Note: Pin Assignment: E: Emitter C: Collector B: Base Pin Assignment 1 2 3 E C B Packing Bulk  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R216-002.
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