2SC5765 Overview
medium power amplifier applications strobo flash applications.
2SC5765 Key Features
- Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)
- ORDERING INFORMATION
- MARKING
| Part number | 2SC5765 |
|---|---|
| Datasheet | 2SC5765_UTC.pdf |
| File Size | 199.16 KB |
| Manufacturer | Unisonic Technologies |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
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medium power amplifier applications strobo flash applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SC5765 | Silicon NPN Transistor | Toshiba Semiconductor |
See all Unisonic Technologies datasheets
| Part Number | Description |
|---|---|
| 2SC5006 | NPN TRANSISTORS |
| 2SC5027 | NPN SILICON TRANSISTOR |
| 2SC5027E | HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR |
| 2SC5200 | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SC5305 | HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR |
| 2SC5353 | HIGH VOLTAGE NPN TRANSISTOR |
| 2SC5353B | HIGH VOLTAGE NPN TRANSISTOR |
| 2SC5508 | NPN SILICON RF TRANSISTOR |
| 2SC5569 | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SC5889 | NPN EPITAXIAL SILICON TRANSISTOR |