Unisonic Technologies 2SC5765
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.| Part No. | 2SC5765 |
|---|---|
| Datasheet | 2SC5765 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
medium power amplifier applications strobo flash applications●
FEATURES
* Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5765L-T9S-K 2SC5765G-T9S-K TO-92SP Note: Pin Assignment: E: Emitter C: Collector B: Base Pin Assignment 1 2 3 E C B Packing Bulk
● MARKING Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R216-002.D 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR
● ABSOLUTE MAXIMUM RATING ( TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO 15 V VCEO 10 V Emitter-Base Voltage VEBO 7 V Collector Current DC Plused IC 5 A 9 A Collector Power Dissipation (Note 2) PC 550 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
