2SC5765 - NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies

General Description

medium power amplifier applications strobo flash applications

Key Features

S.
Low Saturation Voltage: VCE(sat) = 0.27 V (max. ), (Ic = 3A / IB =60 mA).

📥 Download Datasheet

2SC5765 npn epitaxial silicon transistor by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	2SC5765
Manufacturer	Unisonic Technologies
File Size	199.16 KB
Description	NPN EPITAXIAL SILICON TRANSISTOR
Datasheet	2SC5765 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC5765	Silicon NPN Transistor	Toshiba Semiconductor
2SC5761	NPN SiGe RF TRANSISTOR	NEC
2SC5763	NPN TRANSISTOR	Sanyo Semicon Device
2SC5763	NPN Transistor	INCHANGE
2SC5764	NPN TRANSISTOR	Sanyo Semicon Device

Other Datasheets by Unisonic Technologies

Part Number	Description
2SC5006	NPN TRANSISTORS
2SC5027	NPN SILICON TRANSISTOR
2SC5027E	HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
2SC5200	NPN EPITAXIAL SILICON TRANSISTOR
2SC5305	HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH  DESCRIPTION medium power amplifier applications strobo flash applications  FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5765L-T9S-K 2SC5765G-T9S-K TO-92SP Note: Pin Assignment: E: Emitter C: Collector B: Base Pin Assignment 1 2 3 E C B Packing Bulk  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R216-002.