2SC5889 - NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies

Key Features

Large current capacitance.
Low collector-emitter saturation voltage.
High-speed switching.
High allowable power dissipation. 1.

2SC5889 npn epitaxial silicon transistor by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	2SC5889
Manufacturer	Unisonic Technologies
File Size	158.97 KB
Description	NPN EPITAXIAL SILICON TRANSISTOR
Datasheet	2SC5889 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC5889	NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device
2SC5880	Power transistor	Rohm
2SC5881	Power transistor	Rohm
2SC5882	SILICON NPN EPITAXIAL TRANSISTOR	ETC
2SC5883	SMALL-SIGNAL TRANSISTOR	ISAHAYA

Other Datasheets by Unisonic Technologies

Part Number	Description
2SC5006	NPN TRANSISTORS
2SC5027	NPN SILICON TRANSISTOR
2SC5027E	HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
2SC5200	NPN EPITAXIAL SILICON TRANSISTOR
2SC5305	HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching *High allowable power dissipation. 1 APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes. TO -92 S P 1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temerature Storage Temprature SYMBOL VCBO VCEO VEBO Ic www.DataSheet4U.com Icp IB Pc Tj Tstg RATINGS 15 10 7 5 9 1 0.