Unisonic Technologies 2SC5889
NPN EPITAXIAL SILICON TRANSISTOR
APPLICATIONS
FEATURES
*Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching *High allowable power dissipation. 1APPLICATIONS
* relay drivers, lamp drivers, motor drivers, strobes. TO -92 S P 1.EMITTER 2.COLLECTOR 3.BASEABSOLUTE MAXIMUM RATINGS
(Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temerature Storage Temprature SYMBOL VCBO VCEO VEBO Ic Icp IB Pc Tj Tstg RATINGS 15 10 7 5 9 1 0.55 150 -55 ~ +150 UNIT V V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-ON Time Storage Time Fall Time SYMBOL V(BR)C...