Datasheet Summary
UTC 2SD1060
NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
FEATURE
- Low collector-to-emitter saturation voltage: VCE(sat)=0.4V max/IC=3A, IB=0.3A
APPLICATIONS
- Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE...
