2SD1060
Key Features
- Low collector-to-emitter saturation voltage: VCE(sat)=0.4V max/IC=3A, IB=0.3A
- Part: 2SD1060
- Description: NPN EPITAXIAL PLANAR SILICON TRANSISTOR
- Category: Transistor
- Manufacturer: Unisonic Technologies
- Size: 160.27 KB