Unisonic Technologies 2SD1060
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
| Part No. | 2SD1060 |
|---|---|
| Datasheet | 2SD1060 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
*Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching. SOT-89 1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS
(Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP PC Tj TSTG VALUE 60 50 6 5 9 1 150 -55 ~ +150 UNIT V V V A A W °C °CELECTRICAL CHARACTERISTICS
(Ta=25°C) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Gain bandwidth product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time SYMBOL ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO tON tstg tf TEST CONDITIONS VCB=40V,IE=0 VEB=4V,IC=0 VCE=2V, IC=1A VCE=2V, IC=3A, VCE =5V, IC =1A VCB =10V,...
