Unisonic Technologies 2SD1875
NPN EPITAXIAL SILICON TRANSISTOR
| Part No. | 2SD1875 |
|---|---|
| Datasheet | 2SD1875 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
NPN EPITAXIAL SILICON TRANSISTOR * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION Pin Assignment 1 2 3 E C B E C B E C B E C B E C B Packing Tape Box Bulk Tape Reel Tape Box Bulk Ordering Number Package Lead Free Halogen Free 2SD1875L-x-T92-B 2SD1875G-x-T92-B TO-92 2SD1875L-x-T92-K 2SD1875G-x-T92-K TO-92 2SD1875L-x- T92-R 2SD1875G-x- T92-R TO-92 2SD1875L-x-T9N-B 2SD1875G-x-T9N-B TO-92NL 2SD1875L-x-T9N-K 2SD1875G-x-T9N-K TO-92NL Note: Pin Assignment E: EMITTER C: COLLECTOR B: BASE Copyright © 2011 Unisonic Technologies Co., LTD 1 of 2 QW-R201-057,D Free Datasheet 2SD1857 PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector power dissipation Collector current Collector current SYMBOL VCBO VCEO VEBO PC IC ICP NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) RATINGS 120 120 5 1 2 3 UNIT V V V W A A Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note 1.