Unisonic Technologies 2SD965B
NPN Transistor
| Part No. | 2SD965B |
|---|---|
| Datasheet | 2SD965B Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
* Collector current up to 5A * 2SD965B : Collector-Emitter voltage up to 30 V NPN EPITAXIAL SILICON TRANSISTORAPPLICATIONS
* Audio amplifier * Flash unit of camera * Switching circuit 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE *Pb-free plating product number: 2SD965BLABSOLUTE MAXIMUM RATINGS
( Ta=25°C ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG RATINGS 40 30 7 750 5 150 -65 ~ +150 UNIT V V V mW A °C °CELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL Collector-base breakdown voltage BVCBO Collector-emitter breakdown BVCEO voltage Emitter-base breakdown voltage BVEBO Collector cut-off current ICBO Emitter cut-off current IEBO hFE 1 DC current gain(note) hFE 2 hFE 3 Collector-emitter saturation voltage VCE(sat) Current gain bandwidth product fT Output capacitance Cob TEST CONDITIONS Ic=1...
