2SK209 Overview
The UTC 2SK209 is an N-channel junction silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK209 is suitable for audio frequency low noise amplifier, impedance conversion, infrared sensor applications.
2SK209 Key Features
- High breakdown voltage: VGDS= -50V
- High input impedance: IGSS= -1nA (max) at VGS= -30V
- ORDERING INFORMATION
- MARKING


