Unisonic Technologies 2SK209
2SK209 is an N-channel junction silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK209 is suitable for audio frequency low noise amplifier, impedance conversion, infrared sensor applications.| Part No. | 2SK209 |
|---|---|
| Datasheet | 2SK209 Download |
| Manufacturer |  Unisonic Technologies |
| Description | SILICON N-CHANNEL TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* High breakdown voltage: VGDS= −50V * High input impedance: IGSS= −1nA (max) at VGS= −30V● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SK209L-xx-AE3-R 2SK209G-xx-AE3-R Note: Pin Assignment: S: Source D: Drain G: Gate Package SOT-23 Pin Assignment 1 2 3 S D G Packing Tape Reel 2SK209G-xx-AE3-R (1)Packing Type (2)Package Type (3)Rank (4)Green Package (1) R: Tape Reel (2) AE3: SOT-23 (3) xx: refer to Classification of IDSS (4) G: Halogen Free and Lead Free, L: Lead Free
● MARKING Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-117.F 2SK209 JFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-Drain Voltage VGDS -50 V Gate Current IG 10 mA Power Dissipation PD 150 mW Junction Temperature TJ +125 °C Storage Temperature Range TSTG -55 ~ +125 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
