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2SK209 - SILICON N-CHANNEL TRANSISTOR

General Description

The UTC 2SK209 is an N-channel junction silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS.

The UTC 2SK209 is suitable for audio frequency low noise amplifier, impedance conversion, infrared sensor applications.

Key Features

  • High breakdown voltage: VGDS=.
  • 50V.
  • High input impedance: IGSS=.
  • 1nA (max) at VGS=.
  • 30V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2SK209 JFET FIELD EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION TYPE  DESCRIPTION The UTC 2SK209 is an N-channel junction silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK209 is suitable for audio frequency low noise amplifier, impedance conversion, infrared sensor applications.