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2SK209 Datasheet

Manufacturer: Unisonic Technologies
2SK209 datasheet preview

Datasheet Details

Part number 2SK209
Datasheet 2SK209-UTC.pdf
File Size 450.68 KB
Manufacturer Unisonic Technologies
Description SILICON N-CHANNEL TRANSISTOR
2SK209 page 2 2SK209 page 3

2SK209 Overview

The UTC 2SK209 is an N-channel junction silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK209 is suitable for audio frequency low noise amplifier, impedance conversion, infrared sensor applications.

2SK209 Key Features

  • High breakdown voltage: VGDS= -50V
  • High input impedance: IGSS= -1nA (max) at VGS= -30V
  • ORDERING INFORMATION
  • MARKING

2SK209 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Toshiba Semiconductor Logo 2SK209 N-Channel MOSFET Toshiba Semiconductor
NEC Logo 2SK2090 N-Channel MOS FET NEC
Sanyo Semicon Device Logo 2SK2091 N-Channel MOSFET Sanyo Semicon Device
Rohm Logo 2SK2094 4V Drive Nch MOSFET Rohm
Kexin Logo 2SK2094 Silicon N-Channel MOSFET Kexin
Unisonic Technologies logo - Manufacturer

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2SK209 Distributor

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