Unisonic Technologies 2SK2751
N-Channel FET
| Part No. | 2SK2751 |
|---|---|
| Datasheet | 2SK2751 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-Channel FET |
| Buy | Stock & Price |
FEATURES
* Low noise-figure (NF). * High gate to drain voltage VGDO.●
APPLICATIONS
* For impedance conversion in low frequency. * For pyroelectric sensor. N-CHANNEL JFET 3 2 1 SOT-23 (JEDEC TO-236) 3 2 1 SOT-323● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SK2751L-AE3-R 2SK2751G-AE3-R 2SK2751L-AL3-R 2SK2751G-AL3-R Note: Pin Assignment: S: Source D: Drain G: Gate Package SOT-23 SOT-323 Pin Assignment 1 2 3 S D G S D G Packing Tape Reel Tape Reel 2SK2751G-AE3-R (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel (2) AE3: SOT-23, AL3: SOT-323 (3) G: Halogen Free and Lead Free, L: Lead Free
● MARKING HS L: Lead Free G: Halogen Free Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-067.E 2SK2751 N-CHANNEL JFET
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-Drain Voltage VGDS -40 V Drain Current ID 10 mA Gate Current IG 2 mA Allowable Power Dissipation PD 200 mW Channel Temperature TCH +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
