Datasheet4U Logo Datasheet4U.com

2SKTJ04 - SILICON N-CHANNEL TRANSISTOR

General Description

The UTC 2SKTJ04 is an N-channel junction silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS.

The UTC 2SKTJ04 is suitable for audio frequency low noise amplifier, impedance conversion, infrared sensor applications.

Key Features

  • Breakdown voltage: VDGO=20V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK0065 Silicon N-Channel Junction FET Panasonic Semiconductor
2SK0123 Silicon N-Channel MOSFET Panasonic Semiconductor
2SK0198 Silicon N-Channel MOSFET Panasonic Semiconductor
2SK0301 Silicon N-Channel Junction FET Panasonic Semiconductor
2SK0601 Silicon N-Channel MOS FET Panasonic Semiconductor

Other Datasheets by Unisonic Technologies

Part Number Description
2SK209 SILICON N-CHANNEL TRANSISTOR
2SK2751 N-Channel FET
2SK303 JFET
2SK3476 FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 2SKTJ04 Preliminary JFET FIELD EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION TYPE  DESCRIPTION The UTC 2SKTJ04 is an N-channel junction silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SKTJ04 is suitable for audio frequency low noise amplifier, impedance conversion, infrared sensor applications.