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30N06-Q Datasheet PDF

Unisonic Technologies 30N06-Q

30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.
Part No. 30N06-Q
Datasheet 30N06-Q Download
Manufacturer
Unisonic Technologies
Description N-CHANNEL POWER MOSFET
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30N06-Q datasheet page 1 preview

DESCRIPTION

The UTC
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FEATURES

* RDS(ON) = 40mΩ@VGS = 10 V, ID=15A * Ultra low gate charge ( typical 20nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability
● SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-251 1 TO- 252
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 30N06L-TA3-T 30N06G-TA3-T TO-220 30N06L-TF1-T 30N06G-TF1-T TO-220F1 30N06L-TF2-T 30N06G-TF2-T TO-220F2 30N06L-TF3-T 30N06G-TF3-T TO-220F 30N06L-TM3-T 30N06G-TM3-T TO-251 30N06L-TN3-T 30N06G-TN3-T TO-252 30N06L-TN3-R 30N06G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tube Tape Reel Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-979. A 30N06-Q Power MOSFET
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ABSOLUTE MAXIMUM RATINGS

(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate to Source Volta...
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