Unisonic Technologies 30N06V-Q
30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.| Part No. | 30N06V-Q |
|---|---|
| Datasheet | 30N06V-Q Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 40mΩ@VGS = 10 V, ID=15A * Fast switching capability * Avalanche energy specified● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 30N06VL-TM3-T 30N06VG-TM3-T TO-251 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS Packing Tube Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A29. a 30N06V-Q Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate to Source Voltage VDSS VGSS 60 V ±20 V Continuous Drain Current TC = 25°C TC = 100°C ID 30 A 21.3 A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Power Dissipation IDM EAS EAR PD 120 A 250 mJ 8 mJ 46 W Junction Temperature Operation Temperature TJ TOPR +150 -55 ~ +150 °C °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
