Unisonic Technologies 30NM65
30NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.| Part No. | 30NM65 |
|---|---|
| Datasheet | 30NM65 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 0.14Ω @ VGS=10V, ID=15A * High Switching Speed * 100% Avalanche Tested● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 30NM65L-T47-T 30NM65G-T47-T 30NM65L-TA3-T 30NM65G-TA3-T 30NM65L-TF1-T 30NM65G-TF1-T 30NM65L-TF2-T 30NM65G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 TO-220 TO-220F1 TO-220F2 Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tube
● MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-210.D 30NM65 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Drain Current Avalanche Energy Continuous Pulsed (Note 2) Single Pulsed (Note 3) VGSS ID IDM EAS ±30 V 30 A 90 A 737 mJ Peak Diode Recovery dv/dt dv/dt 7.8 V/ns TO-220 265 W Power Dissipation TO-220F1/TO-220F2 PD 34 W TO-247 310 W Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ +150 °C °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
