Unisonic Technologies 30NM90-Q
30NM90-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.| Part No. | 30NM90-Q |
|---|---|
| Datasheet | 30NM90-Q Download |
| Manufacturer |  Unisonic Technologies |
| Description | 900V N-CHANNEL SUPER-JUNCTION MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 0.28 Ω @ VGS=10V, ID=15A * High Switching Speed * 100% Avalanche Tested● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 30NM90L-TA3-T 30NM90G-TA3-T 30NM90L-TF1-T 30NM90G-TF1-T 30NM90L-TF2-T 30NM90G-TF2-T 30NM90L-TF3-T 30NM90G-TF3-T 30NM90L-T47-T 30NM90G-T47-T 30NM90L-TQ2-T 30NM90G-TQ2-T 30NM90L-TQ2-R 30NM90G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-247 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tape Reel Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-884.C 30NM90-Q
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-884.C 30NM90-Q Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID Pulsed (Note 2) IDM 30...
