Unisonic Technologies 3N50-CB
3N50-CB is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.| Part No. | 3N50-CB |
|---|---|
| Datasheet | 3N50-CB Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC The UTC 3N50-CB is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.●
FEATURES
* RDS(ON) < 3.0Ω @ VGS = 10V, ID = 1.5A * High Switching Speed * 100% Avalanche Tested● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N50L-TM3-T 3N50G-TM3-T 3N50L-TN3-R 3N50G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-110.a 3N50-CB Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage Drain Current Continuous (TC=25°C) Pulsed (Note 2) Avalanche Current (Note 2) VGSS ID IDM IAR ±30 3 (Note 5) 12 (Note 5) 3 V A A A Avalanche Energy Single Pulsed (Note 3)...
