Unisonic Technologies 3N60K
3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 3N60K |
|---|---|
| Datasheet | 3N60K Download |
| Manufacturer |  Unisonic Technologies |
| Description | 600V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* VDS = 600V, ID = 3A * RDS(ON) < 3.6Ω @VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness● SYMBOL 1 1 1 Power MOSFET TO-220F TO-220F2 TO-252
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N60KL-TF2-T 3N60KG-TF2-T 3N60KL-TF3-T 3N60KG-TF3-T 3N60KL-TN3-R 3N60KG-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220F2 TO-220F TO-252 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tape Reel
● MARKING INFORMATION PACKAGE TO-220F2 TO-220F TO-252 Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 8 QW-R502-838.B 3N60K Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±30 V Avalanche Current (Note 2) Continuous Drain Current IAR 3.0 A ID 3.0 A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Re...
