Unisonic Technologies 3N65-CB
3N65-CB is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 3N65-CB |
|---|---|
| Datasheet | 3N65-CB Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 2.8 Ω @ VGS = 10 V, ID = 1.5 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 3N65L-TA3-T 3N65G-TA3-T TO-220 3N65L-TF1-T 3N65G-TF1-T TO-220F1 3N65L-TM3-T 3N65G-TM3-T TO-251 3N65L-TN3-R 3N65G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tape Reel
● MARKING Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-B39A 3N65-CB Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Continuous Drain Current VGSS ID ±30 3 V A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IDM EAS 12 A 112 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4 V/ns TO-220 75 W Power Dissipation TO-220F1 PD 34 W TO-251/TO-252 50 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Notes: 1.
