Datasheet4U Logo Datasheet4U.com

3N65-CB - N-CHANNEL MOSFET

Description

The UTC 3N65-CB is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) < 2.8 Ω @ VGS = 10 V, ID = 1.5 A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

Datasheet preview – 3N65-CB

📁 Similar Datasheet

  • 3N65 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 3N65K - 650V N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 3N65K-MK - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 3N65K-MK4 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 3N65M - N-channel Power MOSFET (STMicroelectronics)
  • 3N65Z - 650V N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 3N60 - N-Channel Power MOSFET (nELL)
  • 3N60 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 3N60 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 3N60A - 600V N-CHANNEL POWER MOSFET (Unisonic Technologies)
Other Datasheets by UTC

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 3N65-CB 3A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N65-CB is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) < 2.8 Ω @ VGS = 10 V, ID = 1.
Published: |