Unisonic Technologies 3N70
3N70 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
| Part No. |
3N70 |
| Datasheet |
3N70
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| Manufacturer |
 Unisonic Technologies |
| Description |
700 VOLTS N-CHANNEL POWER MOSFET |
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DESCRIPTION
Power MOSFET The UTC FEATURES
* RDS(ON) ≤4.0Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N70L-TM3-T 3N70G-TM3-T 3N70L-TN3-R 3N70G-TN3-R Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-282,D Datasheet pdf - 3N70 ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Single Pulsed (Note 3) EAS 200 mJ Avalanche Energy Repetitive (Note 2) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 50 W °С Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 Notes: 1.
