Unisonic Technologies 3N80Z
The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 3N80Z |
|---|---|
| Datasheet | 3N80Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) < 4.2Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N80ZL-TF1-T 3N80ZG-TF1-T 3N80ZL-TN3-R 3N80ZG-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel
● MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-912.D 3N80Z Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS 800 V Gate-Source Voltage VGSS ±20 V Minimum Gate-Source Breakdown Voltage (IGS=±1mA) Continuous Drain Current BVGSO ID 30 3.0 V A Pulsed Drain Current Avalanche Current (Note 2) IDM 12 A IAR 4.0 A Single Pulse Avalanche Energy (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 150 mJ 3.1 V/ns Power Dissipation TO-220F1 TO-252 PD 25 W 50 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Notes: 1.
