Unisonic Technologies 3N90-E
The UTC 3N90-E provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 3N90-E |
|---|---|
| Datasheet | 3N90-E Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) < 6.2Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL Power MOSFET
● RDERING INFORMATION Ordering Number Lead Free Halogen Free 3N90L-TM3-T 3N90G-TM3-T 3N90L-TMS2-T 3N90G-TMS2-T 3N90L-TMS4-T 3N90G-TMS4-T 3N90L-TN3-R 3N90G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-251S2 TO-251S4 TO-252 Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tape Reel
● MARKING Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-007.D 3N90-E Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS 900 V Drain-Gate Voltage (RG=20kΩ) VDGR 900 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 3 A Pulsed Drain Current IDM 10 A Avalanche Current (Note 2) IAR 3 A Single Pulse Avalanche Energy (Note 3) EAS 100 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.94 V/ns Power Dissipation PD 45 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1.
