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3NM50 Datasheet PDF

Unisonic Technologies 3NM50

3NM50 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.
Part No. 3NM50
Datasheet 3NM50 Download
Manufacturer
Unisonic Technologies
Description N-CHANNEL MOSFET
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3NM50 datasheet page 1 preview

DESCRIPTION

The UTC
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FEATURES

* RDS(ON) < 1.8Ω @ VGS=10V, ID=1.5A * High Switching Speed * 100% Avalanche Tested
● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3NM50L-TN3-R 3NM50G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel 3NM50L-TN3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) TN3: TO-252 (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-220.a 3NM50
● MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 QW-R205-220.a 3NM50 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS

(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage Drain Current (TC=25°C) Avalanche Current (Note 2) Continuous Pulsed (Note 2) VGSS ID IDM IAR ±30 V 3.0 A 12 A 2.4 A Avalanche Energy (Note 3) Single Pulsed Peak Di...
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