Unisonic Technologies 4N120
The UTC 4N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 4N120 |
|---|---|
| Datasheet | 4N120 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
● FEATURES0 * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N120L-TA3-T 4N120G-TA3-T 4N120L-TF1-T 4N120G-TF1-T 4N120L-TF2-T 4N120G-TF2-T 4N120L-TF3-T 4N120G-TF3-T 4N120L-TQ2-T 4N120G-TQ2-T 4N120L-TQ2-R 4N120G-TQ2-R 4N120L-T47-T 4N120G-T47-T 4N120L-T3F-T 4N120G-T3F-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-263 TO-263 TO-247 TO-3PF Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube Tube Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-531.F 4N120
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-531.F 4N120 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-...
