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4N120 - N-CHANNEL MOSFET

Datasheet Summary

Description

and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S0.
  • RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=2.0A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Datasheet preview – 4N120

Datasheet Details

Part number 4N120
Manufacturer UTC
File Size 1.47 MB
Description N-CHANNEL MOSFET
Datasheet download datasheet 4N120 Datasheet
Additional preview pages of the 4N120 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N120 4.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=2.
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