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4N120 Datasheet N-channel MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD 4N120 4.0A, 1200V N-CHANNEL POWER.

General Description

The UTC 4N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

 FEATURES0 * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N120L-TA3-T 4N120G-TA3-T 4N120L-TF1-T 4N120G-TF1-T 4N120L-TF2-T 4N120G-TF2-T 4N120L-TF3-T 4N120G-TF3-T 4N120L-TQ2-T 4N120G-TQ2-T 4N120L-TQ2-R 4N120G-TQ2-R 4N120L-T47-T 4N120G-T47-T 4N120L-T3F-T 4N120G-T3F-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-263 TO-263 TO-247 TO-3PF Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube Tube .unisonic..tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-531.F 4N120  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD .unisonic..tw 2 of 9 QW-R205-531.F 4N120 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1200 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 4 A Pulsed (Note 2) IDM 8 A Avalanche Energy Single Pulsed (Note 3) EAS 845 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.2 V/ns TO-220/TO-263 140 W Power Dissipation TO-220F/TO-220F1 TO-220F2 PD TO-247 40 W 155 W TO-3PF 42 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.

Key Features

  • S0.
  • RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=2.0A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

4N120 Distributor