4N30Z Datasheet PDF | Unisonic Technologies

Unisonic Technologies 4N30Z

4N30Z is an N-ch annel mod e p ower MOSF ET using UTC’s advanc ed techn ology to provid e customers with a minimum on-state res istance, lo w gate charge a nd superior s witching performance.

Part No.	4N30Z
Datasheet	4N30Z Download
Manufacturer	Unisonic Technologies
Description	40A 300V N-CHANNEL POWER MOSFET
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DESCRIPTION

Power MOSFET The U TC

FEATURES

* RDS(ON)<2Ω @ VGS=10V, ID=4A * High switching speed * Typically 3.2nC low gate charge * 100% avalanche tested * Enhanced ESD capability SYMBOL ORDERING INFORMATION Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube Ordering Number Lead Free Halogen Free 4N30ZL-TN3-R 4N30ZG-TN3-R 4N30ZL-TN3-T 4N30ZG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-849.A 4N30Z Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 300 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 4 A Avalanche Current IAR 4 A Single Pulsed EAS 52 mJ Avalanche Energy Repetitive EAR 52 mJ Power Dissipation PD 1.14 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress rati...