Unisonic Technologies 4N50-MHD
4N50-MHD is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 4N50-MHD |
|---|---|
| Datasheet | 4N50-MHD Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 2.3 Ω @ VGS=10V, ID=2.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N50L-TM3-T 4N50G-TM3-T 4N50L-TN3-R 4N50G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel
● MARKING Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-733.a 4N50-MHD Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 4 A Pulsed Drain Current (Note 2) IDM 8 A Avalanche Energy Single Pulsed (Note 3) EAS 101 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.1 V/ns Power Dissipation PD 45 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
