4N50-MHD
Description
The UTC 4N50-MHD is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
Key Features
- RDS(ON) ≤ 2.3 Ω @ VGS=10V, ID=2.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
- SYMBOL Power MOSFET
