4N50-MHD Key Features
- RDS(ON) ≤ 2.3 Ω @ VGS=10V, ID=2.0A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
| Manufacturer | Part Number | Description |
|---|---|---|
| 4N50 | N-Channel MOSFET Transistor | |
Unisonic Technologies |
4N50 | N-CHANNEL POWER MOSFET |