Unisonic Technologies 4N60-CB
4N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 4N60-CB |
|---|---|
| Datasheet | 4N60-CB Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 2.2Ω @ VGS = 10 V, ID = 2.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N60L-TA3-T 4N60G-TA3-T 4N60L-TF1-T 4N60G-TF1-T 4N60L-TF3-T 4N60G-TF3-T 4N60L-TF3-T 4N60G-TF3-T 4N60L-TM3-T 4N60G-TM3-T 4N60L-TN3-R 4N60G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-100.C 4N60-CB
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R205-100.C 4N60-CB Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS IAR ±30 4.0 V A Drain Current Continuous ID 4.0 A Puls...
