Unisonic Technologies 4N60-TA5
4N60-TA5 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 4N60-TA5 |
|---|---|
| Datasheet | 4N60-TA5 Download |
| Manufacturer |  Unisonic Technologies |
| Description | 600V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N60L-TM3-T 4N60G-TM3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-251 Pin Assignment 1 2 3 G D S Packing Tube
● MARKING Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-184 .a 4N60-TA5 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 4.0 A Continuous Drain Current Pulsed Drain Current (Note 2) ID 4.0 A IDM 12 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 67 mJ 3.03 V/ns Power Dissipation (TC=25°C) Junction Temperature PD 50 W TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
