Unisonic Technologies 4N65-C
4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 4N65-C |
|---|---|
| Datasheet | 4N65-C Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 3.0Ω @ VGS = 10 V, ID = 2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 4N65L-TF1-T 4N65G-TF1-T TO-220F1 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS Packing Tube
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-B27.B 4N65-C Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note2) IAR 4.0 A Drain Current Continuous Pulsed (Note2) ID IDM 4.0 16 A A Avalanche Energy Single Pulsed (Note3) Repetitive (Note2) EAS EAR 150 mJ 5.6 mJ Peak Diode Recovery dv/dt (Note4) dv/dt 3.6 V/ns Power Dissipation PD 36 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: 1.
