Unisonic Technologies 4N65K-MK
4N65K-MK is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 4N65K-MK |
|---|---|
| Datasheet | 4N65K-MK Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 3.1Ω @VGS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N65KL-TF3-T 4N65KG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F Pin Assignment 123 GDS Packing Tube
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-014.a 4N65K-MK Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 650 V VGSS ±30 V Avalanche Current (Note2) Drain Current Continuous Pulsed (Note2) Avalanche Energy Single Pulsed (Note3) Repetitive (Note2) Power Dissipation Derate above 25°C IAR ID IDM EAS EAR PD 4.4 4.0 16 50 10.6 36 0.288 A A A mJ mJ W W/°C Peak Diode Recovery dv/dt (Note4) dv/dt 4.5 V/ns Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ +150 °С °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
