4N70-CB Key Features
- RDS(ON) < 3.36Ω @ VGS = 10V , ID = 2.0A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
4N70-C | N-CHANNEL POWER MOSFET |
Unisonic Technologies |
4N70-E | N-CHANNEL POWER MOSFET |
Unisonic Technologies |
4N70-R | N-CHANNEL POWER MOSFET |
Unisonic Technologies |
4N70-S | N-CHANNEL POWER MOSFET |
| 4N70 | N-Channel MOSFET Transistor |