Unisonic Technologies 4N70Z-E
The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 4N70Z-E |
|---|---|
| Datasheet | 4N70Z-E Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON)=2.5Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N60ZL-TF1-T 4N60ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 123 GDS Packing Tube Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A22. A 4N60Z-E Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±20 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Single Pulsed (Note Repetitive (Note 2) 3) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 4.4 A 4.0 A 16 A 200 mJ 10.6 mJ 4.5 V/ns Power Dissipation Junction Temperature PD 36 W TJ +150 °С Operating Temperature Storage Temperature TOPR TSTG -55 ~ +150 -55 ~ +150 °С °С Notes: 1.
