Unisonic Technologies 4NM120
4NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.| Part No. | 4NM120 |
|---|---|
| Datasheet | 4NM120 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.0A * High Switching Speed● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4NM120L-TF1-T 4NM120G-TF1-T 4NM120L-TF2-T 4NM120G-TF2-T 4NM120L-TW1-T 4NM120G-TW1-T 4NM120L-TN3-R 4NM120G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-220WF TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-D101.d 4NM120
● MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R502-D101.d 4NM120 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1200 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current Continuous Pulsed ID IDM 4 8 A A Avalanche Energy Single Pulsed (Note 3) EAS 95 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2 V/ns TO-220F1 Power Dissipation TO-220F2 TO-220WF PD 24 W TO-252 28 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
