Unisonic Technologies 4NM65
4NM65 is a Super Junction MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.| Part No. | 4NM65 |
|---|---|
| Datasheet | 4NM65 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤1.4Ω @ VGS=10V, ID=2.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness Power MOSFET 11 TO-251 TO-220F 1 TO-220F1 1 TO-251S 1 TO-252● SYMBOL
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4NM65L-TF3-T 4NM65G-TF3-T 4NM65L-TF1-T 4NM65G-TF1-T 4NM65L-TM3-T 4NM65G-TM3-T 4NM65L-TMS-T 4NM65G-TMS-T 4NM65L-TN3-R 4NM65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-220F1 TO-251 TO-251S TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-331.B 4NM65
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-331.B 4NM65 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed (Note2) ID IDM 4.0 A 16 A Avalanche...
