Unisonic Technologies 50NM60
50NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.| Part No. | 50NM60 |
|---|---|
| Datasheet | 50NM60 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 85mΩ @ VGS=10V, ID=25A * High Switching Speed * 100% Avalanche Tested● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 50NM60L-T47-T 50NM60G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 123 GDS Packing Tube
● MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-330.B 50NM60 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 50 A 200 A Avalanche Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IAR EAS 10 1800 A mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 50 V/ns Power Dissipation PD 310 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
