Unisonic Technologies 5N100-FC
The UTC 5N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 5N100-FC |
|---|---|
| Datasheet | 5N100-FC Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) ≤ 2.3Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 5N100L-TA3-T 5N100G-TA3-T 5N100L-TF1-T 5N100G-TF1-T 5N100L-TF3-T 5N100G-TF3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube
● MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-513.A 5N100-FC Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1000 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 5A Pulsed (Note 2) IDM 10 A Avalanche Energy Single Pulsed (Note 3) EAS 62 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.24 V/ns Power Dissipation TO-220 TO-220F/TO-220F1 PD 140 W 30 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
