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5N120-E3 - N-CHANNEL POWER MOSFET

General Description

charge and operation with low gate voltages.

suitable for use as a load switch or in PWM applications.

Key Features

  • S0.
  • RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A.
  • Low Reverse Transfer Capacitance 1.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET TO-247 TO-220 TO-263.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD 5N120-E3 Preliminary 5.0A, 1200V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 5N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1  FEATURES0 * RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.