Unisonic Technologies 5N120-E3
The UTC 5N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 5N120-E3 |
|---|---|
| Datasheet | 5N120-E3 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
1● FEATURES0 * RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance 1 * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
● SYMBOL Power MOSFET TO-247 TO-220 TO-263
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5N120L-TA3-T 5N120G-TA3-T 5N120L-TQ2-T 5N120G-TQ2-T 5N120L-TQ2-R 5N120G-TQ2-R 5N120L-T47-T 5N120G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-263 TO-263 TO-247 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tape Reel Tube Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-D213.b 5N120-E3
● MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R502-D213.b 5N120-E3 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Dio...
