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5N120-E3 Datasheet

N-channel Power MOSFET

Manufacturer: Unisonic Technologies

5N120-E3 Overview

The UTC 5N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ratings are those values beyond which the device could be permanently damaged.

5N120-E3 Key Features

  • RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A
  • Low Reverse Transfer Capacitance
  • Fast Switching Capability
  • Avalanche Energy Specified
  • Improved dv/dt Capability, High Ruggedness
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING

5N120-E3 Distributor