Unisonic Technologies 5N25Z
5N25Z is an N-Channel enhancement MOSFET, it uses UTC’s advanc ed techn ology to provid e customers with a minimum on-state resistance, hig h s witching spe ed and lo w gate charge. It can also withstand hig h e nergy pu lse i n the avala nche and commutation modes. The UT C 5N25Z is suitable for high efficie ncy s witching D C/DC converter, motor control and switch mode power supply.| Part No. | 5N25Z |
|---|---|
| Datasheet | 5N25Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | 3.8A 250V LOGIC N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON)<1.2Ω @ VGS=10V * Low gate charge ( Typ=14nC) * Low CRSS ( Typ=6.0pF) * High switching speed * ESD Capability● SYMBOL
● ORDERING INFORMATION Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel Ordering Number Lead Free Halogen Free 5N25ZL-TN3-T 5N25ZG-TN3-T 5N25ZL-TN3-R 5N25ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-853.b 5N25Z
● Preliminary Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise noted) UNIT PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 250 V Gate-Source Voltage VGSS ±20 V Continuous I A D 3.8 Drain Current Pulsed (Note 2) IDM 9 A Avalanche Current (Note 2) IAR 3.8 A Single Pulsed (Note 3) EAS 60 mJ Avalanche Energy Repetitive (Note 2) EAR 3.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 5.5 V/ns 2.5 W TA=25°C Power Dissipation TC=25°C 37 PD W Derate above 25°C 0.29 W/°C Junction Temperature TJ -55~ +150 °C Storage Temperature Range TSTG -55~ +150 °C Note: 1.
