DESCRIPTION
1 Power MOSFET The U TC T his technolo gy i s design ed to meet the requirements of the minim um on- state resistance an d perfec t switching perf ormance. TO-220F FEATURES
* RDS(ON) = 1.4Ω @VGS = 10 V * 100% avalanche tested * High switching speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Package TO-220F Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 5N50KL-TF3-T 5N50KG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-870.A 5N50K Power MOSFET ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) UNIT PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V A Continuous I D 5 Drain Current Pulsed (Note 2) IDM 20 A Avalanche Current (Note 2) IAR 5 A mJ Single Pulsed (Note 3) EAS 270 Avalanche Energy Repetitive (Note 2) EAR 7.3 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 38 W Junction Temperature TJ + 150 °C Storage Temperature TSTG -55~ +150 °C Note: 1.