Unisonic Technologies 5N60Z
5N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 5N60Z |
|---|---|
| Datasheet | 5N60Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | 5A 600V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 2.2Ω @ VGS=10V, ID=2.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 5N60ZL-TF1-T 5N60ZG-TF1-T 5N60ZL-TN3-R 5N60ZG-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-909.b 5N60Z
● MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R502-909.b 5N60Z Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±20 V IAR 5 A Continuous Drain Current Pulsed Drain Current (Note 2) ID 5 A IDM 10 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 90 mJ 3.4 V/ns Power Dissipation TO-220F1 TO-252 PD 36 W 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
