ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 5 A Continuous Drain Current ID 5 A Pulsed Drain Current (Note 2) IDM 20 A Single Pulsed (Note 3) EAS 100 Avalanche Energy mJ Repetitive (Note 2) EAR 10 Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 36 W Junction Temperature TJ + 150 °C Operation Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L = 8mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA SYMBOL θJA θJC 3.47 RATINGS 62.5 UNIT °C/W °C/W PARAMETER Junction to Ambient Ju...
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