Unisonic Technologies 5N80-CQ
5N80-CQ is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 5N80-CQ |
|---|---|
| Datasheet | 5N80-CQ Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC● FEATURES0 * RDS(ON) ≤ 3.8 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5N80L-TA3-T 5N80G-TA3-T 5N80L-TF3-T 5N80G-TF3-T 5N80L-TF1-T 5N80G-TF1-T 5N80L-TM3-T 5N80G-TM3-T 5N80L-TN3-R 5N80G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-473.C 5N80-CQ
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-473.C 5N80-CQ Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 800 V VGSS ±30 V Drain Current Continuous ID 5 A Pulsed (Note 2) IDM 8 A Avalanche Energy...
