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5N80-CQ - N-CHANNEL POWER MOSFET

Description

The UTC 5N80-CQ is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S0.
  • RDS(ON) ≤ 3.8 Ω @ VGS=10V, ID=2.0A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Datasheet preview – 5N80-CQ

Datasheet Details

Part number 5N80-CQ
Manufacturer UTC
File Size 508.05 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 5N80-CQ Datasheet
Additional preview pages of the 5N80-CQ datasheet.

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    UNISONIC TECHNOLOGIES CO., LTD 5N80-CQ 5A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N80-CQ is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES0 * RDS(ON) ≤ 3.8 Ω @ VGS=10V, ID=2.
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