Unisonic Technologies 5N80
5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge. It can be applied in high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, DC-AC inverters for welding equipment and uninterruptible power supply(UPS).| Part No. | 5N80 |
|---|---|
| Datasheet | 5N80 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 2.5Ω @ VGS=10V, ID=2.5A * Avalanche rugged technology * Low input capacitance * Low gate charge * Application oriented characterization 1 1 1● SYMBOL Power MOSFET TO-220 TO-220F TO-220F1 TO-262
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 5N80L-TA3-T 5N80G-TA3-T 5N80L-TF3-T 5N80G-TF3-T 5N80L-TF1-T 5N80G-TF1-T 5N80L-T2Q-T 5N80G-T2Q-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-262 Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tube Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-483.F 5N80
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R502-483.F 5N80 Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VGS=0 VDS 800 V Gate-Source Voltage Drain-Gate Voltage RGS=20kΩ VGS VDGR ±30 800 V V Drain Current (Continuous) Continuous Pulsed (Note 2) ID IDM 5.5 A 20 A Avalanche Ene...
