Unisonic Technologies 5NM60
5NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.| Part No. | 5NM60 |
|---|---|
| Datasheet | 5NM60 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(on) < 1.08Ω @ VGS=10V, ID=2.5A * Improved dv/dt capability * Fast switching * 100% avalanche tested● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5NM60L-AA3-R 5NM60G-AA3-R 5NM60L-TF1-T 5NM60G-TF1-T 5NM60L-TM3-T 5NM60G-TM3-T 5NM60L-TN3-R 5NM60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-220F1 TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS Packing Tape Reel Tube Tube Tape Reel Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-283.D 5NM60
● MARKING SOT-223 Power MOSFET TO-220F1 / TO-251 / TO-252 UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R205-283.D 5NM60 Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Current (Note 2) VGSS ID IDM IAR ±30 V 5A 20 A 1.7 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recove...
