Unisonic Technologies 5NM70Z-U2
5NM70Z-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.| Part No. | 5NM70Z-U2 |
|---|---|
| Datasheet | 5NM70Z-U2 Download |
| Manufacturer |  Unisonic Technologies |
| Description | 700V N-CHANNEL SUPER-JUNCTION MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 1.5 Ω @ VGS=10V, ID=1.0A * Fast Switching Capability * Improved dv/dt Capability, High Ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5NM70ZL-AA2-R 5NM70ZG-AA2-R 5NM70ZL-AA3-R 5NM70ZG-AA3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223-2 SOT-223 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tape Reel Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-578.D 5NM70Z-U2
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-578.D 5NM70Z-U2 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID Pulsed (Note 2) IDM 5 20 A A Avalanche Energy Single Pulsed (Note 3) EAS 72 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.1 V/ns Power Dissipation PD 5 (Note 5) W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
