Unisonic Technologies 60NM65
60NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.| Part No. | 60NM65 |
|---|---|
| Datasheet | 60NM65 Download |
| Manufacturer |  Unisonic Technologies |
| Description | 650V N-CHANNEL SUPER-JUNCTION MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 0.065 Ω @ VGS=10V, ID=30A * High Switching Speed * 100% Avalanche Tested● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 60NM65L-T3F-T 60NM65G-T3F-T 60NM65L-T3P-T 60NM65G-T3P-T 60NM65L-T47-T 60NM65G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-3PF TO-3P TO-247 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube
● MARKING Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-165.E 60NM65 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID Pulsed (Note 2) IDM 60 A 120 A Avalanche Current (Note 2) IAR 10 A Avalanche Energy Single Pulsed (Note 3) EAS 2000 mJ Peak Diode Recovery dv/dt dv/dt 8 V/ns TO-247 156 W Power Dissipation TO-3P PD 250 W TO-3PF 80 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
