Unisonic Technologies 6N40-TC
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.| Part No. | 6N40-TC |
|---|---|
| Datasheet | 6N40-TC Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) < 1.1Ω @ VGS=10V, ID=3.0A * Avalanche Energy Specified * Fast Switching Capability * Linear Transfer Characteristics * High Input Impedance● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 6N40L-TN3-R 6N40G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GD S Packing Tape Reel
● MARKING Copyright © 2017 Unisonic Technologies Co., Ltd. 1 of 5 QW-R205-373 a 6N40-TC Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage Drain Current Avalanche Current (Note 2) Continuous Pulsed (Note 2) VGSS ID IDM IAR ±20 6.0 24 4.6 V A A A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 106 mJ 2.0 V/ns Power Dissipation Junction Temperature PD 48 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
